High-performance inorganic metal halide perovskite transistors

Abstract The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability perovskite-based do not yet match which limit broader application. Here we report high-performance p-channel thin-film based on inorganic caesium tin triiodide semiconducting layers have moderate hole concentrations high Hall mobilities. channels are formed by engineering film composition crystallization process using a tin-fluoride-modified caesium-iodide-rich precursor lead substitution. optimized exhibit field-effect mobilities over 50 cm 2 V ?1 s on/off current ratios exceeding 10 8 , well operational reproducibility.